FMNT rubrique Axes stratégiques 2022

Seminar : Advanced SRAM Technologies

SEMINAR LTM - 05 octobre 2022 à 14h - Salle Z307 (3ème étage - Batiment Z- Phelma) - Prof. Vita Pi-Ho HU
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Abstract :
Static random-access memory (SRAM) is a volatile storage technology that requires a constant power supply to store data. With its rapid access time and low power consumption, SRAM has become indispensable in memory technology. For improved computing performance, central processing units are now equipped with large-capacity cache memory (one type of fast SRAM) to hold copies of data from the main memory blocks and reduce data access latency. Because the computing cores constantly access on-chip SRAM caches, improving the density, performance, and energy efficiency of SRAM caches is essential for future high-performance computing applications. In this talk, I will introduce our recent works regarding advanced SRAM technologies, including 2D materials-based SRAM, cryo-CMOS SRAM, and non-volatile ferroelectric-based SRAM cells.

Speaker’s bio :
Vita Pi-Ho Hu received a B.S. degree in materials science & engineering and a Ph.D. degree in electronics engineering from National Chiao Tung University, Hsinchu, Taiwan, in 2004 and 2011, respectively. Her research interests include Ferroelectric FET memory, advanced nanoelectronics, low-power and high-performance SRAM, and monolithic 3D IC. Currently, she is an Associate Professor at the Department of Electrical Engineering, National Taiwan University.
Dr. Hu has received the Outstanding Paper Award at the 2011 IEEE International Conference on I.C. Design and Technology (ICICDT), the Postdoctoral Research Award from Taiwan Semiconductor Industry Association (TSIA) in 2014, Best Paper Award at IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) in 2015, Excellent Young Researcher Project Award from the Ministry of Science and Technology (MOST) in 2016, Exploration Research Award from Pan Wen Yuan Foundation in 2017, MOST Young Scholar Fellowship in 2018, Outstanding Youth Award from the Electronics Devices and Materials Association (EDMA) in 2019, and Ta-You Wu Memorial Award in 2021. Dr. Hu was a Visiting Scholar with the Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA, USA, in 2017. She has served as the technical committee member of the International Symposium on Quality Electronic Design (ISQED) (2018-present) and the International Electron Devices Meeting (IEDM) in 2022.